WebVishay Intertechnology WebIRF720 SiHF720 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 400 V Gate-Source Voltage …
BYV32-200 - Switch‐mode Power Rectifier - Onsemi
WebThis MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. WebIRF720 MOSFET. Datasheet pdf. Equivalent Type Designator: IRF720 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 50 W Maximum Drain-Source Voltage Vds : 400 V Maximum Gate-Source Voltage Vgs : 20 V Maximum Gate-Threshold Voltage Vgs (th) : 4 V Maximum Drain Current Id : 3.3 A cummins 1976
IRF720 Datasheet pdf - 3.3A, 400V, 1.800 Ohm, N-Channel Power …
WebDetails, datasheet, quote on part number: IRF720 Features, Applications This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. WebIRF720: Trans MOSFET N-CH 400V 3.3A 3-Pin(3+Tab) TO-220AB: New Jersey Semiconductor: 8: IRF720: N-CHANNEL POWER MOSFETS: Samsung Electronic: 9: IRF720: N-channel MOSFET, 400V, 3.3A: SGS Thomson Microelectronics: 10: IRF720 1: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package: International Rectifier: 11: IRF720 … WebIRFZ44N Product details GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD … eastwood aluma blast